Events

114 Steidle
1:00-2:30 PM

In response to the crowded electromagnetic spectrum environment, next generation RF/mmW systems continue to push performance to overcome many of the challenges posed by this environment. Higher power densities, higher power efficiencies, greater linearity, all at higher frequencies and with wider operational frequency bandwidths are all potential pieces of the solution for these next generation RF/mmW systems. These performance requirements are in turn creating a demand for advanced materials, such as wide bandgap (e.g. GaN, SiC, etc) and ultra-wide bandgap materials (e.g. diamond, Ga2O3, AlN, c-BN, etc.) as well as new device topologies that in conjunction with using these materials have the potential to solve the technology gaps between the future requirements and the current state of the art/state of practice materials and devices. This seminar will discuss this and then focus on a device topology that provides a potential solution to some of these issues, the Superlattice Castellated Field Effect Transistor (SLCFET), which uses an AlGaN/GaN superlattice structure between source and drain to form multiple parallel current channels, combined with a three-dimensional gate structure wrapping around nanoribbons etched into the epitaxially grown superlattice structure. The SLCFET technology has been demonstrated to be a superlative RF/mmW switch technology, as the first transistor structure to ‘break’ the linkage between a transistor’s ON state resistance and OFF state capacitance. This talk will detail the SLCFET’s functionality and performance as both an RF/mmW switch and amplifier technology, and how it provides a potential solution for the demands of next generation wide band RF/mmW systems.

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101 Electrical Engineering East
10:00-11:00 AM

Since the invention of the integrated circuit in 1958, the integration of exponentially more devices onto a single chip has transformed computing—yet memory remains largely separated from logic, resulting in a “memory wall”. Recent advances in memory research have introduced a variety of new memory technologies. My research focus, Memory Integration and Data Dis-Aggregation (MIDDAS), envisions a future where massive, diverse memories are physically integrated yet functionally store disaggregated data. MIDDAS encompasses a continuous spectrum of memory characteristics. This is exemplified by BRIDGE (Blended Retention-Indexed Diverse Gain cEll), a gain cell memory platform developed in my PhD research. The 2-transistor (2T) gain cell memory offers high density and CMOS integration compatibility. By introducing oxide semiconductor (OS) transistors with ultra-low leakage current (< 1e-17 A/µm), BRIDGE expands the design space to support retention times spanning microseconds to seconds. BRIDGE is demonstrated on fabricated N40 CMOS+X monolithic 3D integration chip with Atomic-Layer-Deposited (ALD) Indium Tin Oxide (ITO) FET. Hybrid gain cell (OS-Si) demonstrates 3x density and lower energy compared to high-density (HD) SRAM, scalable to N5 and beyond. Furthermore, integrating gain cells with non-volatile memories (e.g., RRAM) unlocks synergistic system-level benefits from device-circuit-architecture co-design, embodying the “1+1>2” philosophy where diverse memory technologies collaboratively enhance system functionality through integration. MIDDAS repositions memory as a scalable, intelligent toolbox for AI-era computing, capitalizing on the predictability of memory access, bridging device innovation with software demands.

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101 Electrical Engineering East
10:00-11:00 AM

Radio frequency (RF) and power electronics play a critical role in our daily lives. RF electronics enables high speed wireless communication (5G, 6G etc.), broadcasting, radars etc. Power electronics is now becoming a necessity for new applications such as electric vehicles, energy efficient data centers, motor drives etc. Additionally, these technologies are required in the defense sector as well to gain tactical advantage. For example, RF electronics is needed for radars, satellite communications etc. Power electronics enables lighter vehicles such as electric ships, electric aircraft, reduced power storage overhead etc. These applications are also coupled with extreme environments found in hypersonic jets, space exploration etc. Therefore, these applications require continuous improvement as well as new functionalities over incumbent technologies. In this regard, ultra-wide band gap materials are emerging as a new class of materials to serve these applications. In my talk, I will go over the advances made by our team (as well as in the field) to make these materials a reality in RF, power and extreme environment applications.

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102/103 ECoRE

The rapid expansion of AI data centers, cryptocurrency mining operations, and hydrogen production facilities is creating unprecedented electricity demand on power grids. These large, fast-growing loads pose new challenges for planning, operations, and reliability—prompting heightened attention from utilities, regulators, OEMs, and grid operators. This all-day workshop will bring together leading experts from industry, government, and academia to examine the emerging implications of large-load integration and discuss pathways to maintain a stable and resilient grid. The event is open to the Penn State community and invited external partners, and is designed to foster meaningful dialogue among the stakeholders shaping the future of power systems.

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