9:30-10:30 AM, 101 Electrical Engineering East
Emerging computing and sensing applications increasingly demand electronic devices that operate beyond the limits of conventional CMOS scaling, requiring improved energy efficiency, robustness under extreme conditions, and new modes of integration with biological and physical environments. Addressing these challenges calls for a rethinking of device architecture guided by materials science and device physics rather than continued geometric scaling alone.
In this seminar, I will first present my Ph.D. research on ferroelectric memory devices based on wurtzite III-nitride ferroelectrics, with a focus on AlScN-gated ferroelectric FETs, and ferroelectric diodes. By integrating ultrathin ferroelectric layers with emerging channel materials, including two-dimensional semiconductors and oxide channels, these devices demonstrate high performance, scalability, and new functionality enabled by ferroelectric polarization control.
I will then outline my broader research vision aimed at expanding electronic systems beyond conventional operating regimes. This includes (i) electronics robust to extreme environments such as high temperature and radiation, (ii) low-temperature and BEOL-compatible device integration for monolithic 3D architectures, and (iii) transient and bio-resorbable electronic systems for healthcare monitoring and space applications. The unifying theme of my work is understanding how device lifetime, material choice, and fabrication strategies should be co-designed based on the intended operational environment and application requirements.
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