Photo of Rongming Chu

Rongming Chu

Associate Professor

Department(s):

  • School of Electrical Engineering and Computer Science
  • Electrical Engineering

N-237 Millennium Science Complex

ruc634@psu.edu

814-863-3136

Research Areas:

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Interest Areas:

 
 

 

Education

  • Ph D, Electrical & Computer Engineering, University of California, 2008

Publications

Journal Article

  • H Amano, Y Baines, E Beam, Matteo Borga, T Bouchet, Paul R Chalker, M Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu and others, 2018, "The 2018 GaN power electronics roadmap", Journal of Physics D: Applied Physics, 51, (16), pp. 163001
  • Michael R Hontz, Yu Cao, Mary Chen, Ray Li, Austin Garrido, Rongming Chu and Raghav Khanna, 2017, "Modeling and Characterization of Vertical GaN Schottky Diodes With AlGaN Cap Layers", IEEE Transactions on Electron Devices, 64, (5), pp. 2172--2178
  • Yu Cao, Ray Li, Adam J Williams, Rongming Chu, Andrea L Corrion and Ryan Chang, 2017, "Non-polar GaN film growth on (0 1 0) gallium oxide substrate by metal organic chemical vapor deposition", Journal of Materials Research, 32, (9), pp. 1611--1617
  • Ray Li, Yu Cao, Mary Chen and Rongming Chu, 2016, "600 V/$1.7\~{}$\backslash$Omega $ Normally-Off GaN Vertical Trench Metal--Oxide--Semiconductor Field-Effect Transistor", IEEE Electron Device Letters, 37, (11), pp. 1466--1469
  • Rongming Chu, Yu Cao, Mary Chen, Ray Li and Daniel Zehnder, 2016, "An experimental demonstration of GaN CMOS technology", IEEE Electron Device Letters, 37, (3), pp. 269--271
  • Y Cao, Rongming Chu, R Li, M Chen, R Chang and B Hughes, 2016, "High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth", Applied Physics Letters, 108, (6), pp. 062103
  • Y Cao, Rongming Chu, R Li, M Chen and AJ Williams, 2016, "Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier", Applied Physics Letters, 108, (11), pp. 112101
  • David F Brown, Keisuke Shinohara, Andrea L Corrion, Rongming Chu, Adam Williams, Joel C Wong, Ivan Alvarado-Rodriguez, Robert Grabar, Michael Johnson, Colleen M Butler and others, 2013, "High-Speed, Enhancement-Mode GaN Power Switch With Regrown $$\$$\backslash$rm n$\$+ $ GaN Ohmic Contacts and Staircase Field Plates", IEEE Electron Device Letters, 34, (9), pp. 1118--1120
  • Rongming Chu, Andrea Corrion, Mary Chen, Ray Li, Danny Wong, Daniel Zehnder, Brian Hughes and Karim Boutros, 2011, "1200-V normally off GaN-on-Si field-effect transistors with low dynamic on-resistance", IEEE Electron Device Letters, 32, (5), pp. 632--634
  • M Higashiwaki, Y Pei, Rongming Chu and UK Mishra, 2011, "Compound Semiconductor Devices-Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors", IEEE Transactions on Electron Devices, 58, (6), pp. 1681
  • Masataka Higashiwaki, Yi Pei, Rongming Chu and Umesh K Mishra, 2011, "Effects of barrier thinning on small-signal and 30-GHz power characteristics of AlGaN/GaN heterostructure field-effect transistors", IEEE Transactions on Electron Devices, 58, (6), pp. 1681--1686
  • T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, G Koblmueller, Rongming Chu, C Poblenz, N Fichtenbaum and others, 2011, "Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors", Applied Physics Letters, 99, (20), pp. 203501
  • Z Chen, Y Pei, Rongming Chu, S Newman, D Brown, R Chung, S Keller, SP DenBaars, S Nakamura and UK Mishra, 2010, "Growth and characterization of AlGaN/GaN/AlGaN field effect transistors", physica status solidi c, 7, (10), pp. 2404--2407
  • Koblm\"uller, G, Rongming Chu, A Raman, UK Mishra and JS Speck, 2010, "High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels", Journal of Applied Physics, 107, (4), pp. 043527
  • Masataka Higashiwaki, Zhen Chen, Rongming Chu, Yi Pei, Stacia Keller, Umesh K Mishra, Nobumitsu Hirose, Toshiaki Matsui and Takashi Mimura, 2009, "A comparative study of effects of SiN x deposition method on AlGaN/GaN heterostructure field-effect transistors", Applied Physics Letters, 94, (5), pp. 053513
  • Yi Pei, Kenneth J Vampola, Zhen Chen, Rongming Chu, Steven P DenBaars and Umesh K Mishra, 2009, "AlGaN/GaN HEMT with a transparent gate electrode", IEEE Electron Device Letters, 30, (5), pp. 439--441
  • David F Brown, Rongming Chu, Stacia Keller, Steven P DenBaars and Umesh K Mishra, 2009, "Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition", Applied Physics Letters, 94, (15), pp. 153506
  • Z Chen, Y Pei, S Newman, Rongming Chu, D Brown, R Chung, S Keller, SP Denbaars, S Nakamura and UK Mishra, 2009, "Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer", Applied Physics Letters, 94, (11), pp. 112108
  • Rongming Chu, Zhen Chen, Yi Pei, Scott Newman, Steven P DenBaars and Umesh K Mishra, 2009, "MOCVD-grown AlGaN buffer GaN HEMTs with V-gates for microwave power applications", IEEE Electron Device Letters, 30, (9), pp. 910--912
  • Rongming Chu, Likun Shen, Nicholas Fichtenbaum, Zhen Chen, Stacia Keller, Steven P DenBaars and Umesh K Mishra, 2008, "Correlation between DC--RF dispersion and gate leakage in deeply recessed GaN/AlGaN/GaN HEMTs", IEEE Electron Device Letters, 29, (4), pp. 303--305
  • Koblm\"uller, Gregor, Rongming Chu, Feng Wu, Umesh K Mishra and James S Speck, 2008, "Dislocation reduction in AlGaN/GaN heterostructures on 4H-SiC by molecular beam epitaxy in the thermal decomposition regime", Applied physics express, 1, (6), pp. 061103
  • Y Pei, Rongming Chu, L Shen, NA Fichtenbaum, Z Chen, D Brown, S Keller, SP Denbaars and UK Mishra, 2008, "Effect of Al composition and gate recess on power performance of AlGaN/GaN high-electron mobility transistors", IEEE Electron Device Letters, 29, (4), pp. 300--302
  • Rongming Chu, Christiane Poblenz, Man Hoi Wong, Sansaptak Dasgupta, Siddharth Rajan, Yi Pei, Felix Recht, Likun Shen, James S Speck and Umesh K Mishra, 2008, "Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied physics express, 1, (6), pp. 061101
  • S Keller, CS Suh, NA Fichtenbaum, M Furukawa, Rongming Chu, Z Chen, K Vijayraghavan, S Rajan, SP DenBaars, JS Speck and others, 2008, "Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures", Journal of Applied Physics, 104, (9), pp. 093510
  • Man Hoi Wong, Yi Pei, Rongming Chu, Siddharth Rajan, Brian L Swenson, David F Brown, Stacia Keller, Steven P DenBaars, James S Speck and Umesh K Mishra, 2008, "N-face metal--insulator--semiconductor high-electron-mobility transistors with AlN back-barrier", IEEE Electron Device Letters, 29, (10), pp. 1101--1104
  • Rongming Chu, Likun Shen, Nicholas Fichtenbaum, David Brown, Stacia Keller and Umesh K Mishra, 2008, "Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts", IEEE Electron Device Letters, 29, (4), pp. 297--299
  • S Keller, CS Suh, Z Chen, Rongming Chu, S Rajan, NA Fichtenbaum, M Furukawa, SP DenBaars, JS Speck and UK Mishra, 2008, "Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, 103, (3), pp. 033708
  • Rongming Chu, Christiane Poblenz, Man Hoi Wong, Sansaptak Dasgupta, Siddharth Rajan, Yi Pei, Felix Recht, Likun Shen, James S Speck and Umesh K Mishra, 2008, "Semiconductor, superconductor, spintronic, dielectric, and organic materials-Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied Physics Express, 1, (6), pp. 61101
  • Rongming Chu, Zhen Chen, Steven P DenBaars and Umesh K Mishra, 2008, "V-gate GaN HEMTs with engineered buffer for normally off operation", IEEE Electron Device Letters, 29, (11), pp. 1184--1186
  • Y Pei, C Poblenz, AL Corrion, Rongming Chu, L Shen, JS Speck and UK Mishra, 2008, "X-and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE", Electronics Letters, 44, (9), pp. 1
  • Rongming Chu, CS Suh, MH Wong, N Fichtenbaum, D Brown, L McCarthy, S Keller, F Wu, JS Speck and UK Mishra, 2007, "Compound Semiconductor Devices-Impact of CF4 Plasma Treatment on GaN", IEEE Electron Device Letters, 28, (9), pp. 781
  • YC Kong, Rongming Chu, YD Zheng, CH Zhou, SL Gu, R Zhang, P Han, Y Shi and RL Jiang, 2007, "Function of quantum-confinement effect in the Al Ga N/ Al N/ Ga N heterostructure with an AlN interfacial layer", Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 25, (3), pp. 873--876
  • Rongming Chu, Chang Soo Suh, Man Hoi Wong, Nicholas Fichtenbaum, David Brown, Lee McCarthy, Stacia Keller, Feng Wu, James S Speck and Umesh K Mishra, 2007, "Impact of $$\backslash$hbox $\$CF$\$ \_ $\$4$\$ $ Plasma Treatment on GaN", IEEE Electron Device Letters, 28, (9), pp. 781--783
  • Man Hoi Wong, Siddharth Rajan, Rongming Chu, Palacios, Tom\'as, Chang-Soo Suh, Lee S McCarthy, Stacia Keller, James S Speck and Umesh K Mishra, 2007, "N-face high electron mobility transistors with a GaN-spacer", physica status solidi (a), 204, (6), pp. 2049--2053
  • Christiane Poblenz, Andrea L Corrion, Felix Recht, Chang Soo Suh, Rongming Chu, Likun Shen, James S Speck and Umesh K Mishra, 2007, "Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz", IEEE Electron Device Letters, 28, (11), pp. 945--947
  • Yi Pei, Rongming Chu, Nicholas A Fichtenbaum, Zhen Chen, David Brown, Likun Shen, Stacia Keller, Steven P DenBaars and Umesh K Mishra, 2007, "Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz", Japanese Journal of Applied Physics, 46, (12L), pp. L1087
  • YC Kong, Rongming Chu, YD Zheng, CH Zhou, B Shen, SL Gu, R Zhang, P Han, Y Shi and RL Jiang, 2006, "Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure", physica status solidi (a), 203, (5), pp. 1018--1023
  • Rongming Chu, Yugang Zhou, Jie Liu, Deliang Wang, Kevin J Chen and Kei May Lau, 2005, "AlGaN-GaN double-channel HEMTs", IEEE Transactions on electron devices, 52, (4), pp. 438--446
  • Yugang Zhou, Deliang Wang, Rongming Chu, Chak-Wah Tang, Yundong Qi, Zhengdong Lu, Kevin J Chen and Kei May Lau, 2005, "Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition", Journal of electronic materials, 34, (1), pp. 112--118
  • Yugang Zhou, Rongming Chu, Jie Liu, Kevin J Chen and Kei May Lau, 2005, "Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth", physica status solidi (c), 2, (7), pp. 2663--2667
  • Jie Liu, Yugang Zhou, Rongming Chu, Yong Cai, Kevin J Chen and Kei May Lau, 2005, "Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs", IEEE electron device letters, 26, (3), pp. 145--147
  • YF Mei, ZM Li, Rongming Chu, ZK Tang, GG Siu, Ricky KY Fu, Paul K Chu, WW Wu and KW Cheah, 2005, "Synthesis and optical properties of germanium nanorod array fabricated on porous anodic alumina and Si-based templates", Applied Physics Letters, 86, (2), pp. 021111
  • Tomislav Suligoj, Haitao Liu, Johnny KO Sin, Kenneth Tsui, Rongming Chu, Kevin J Chen, Petar Biljanovic and Kang L Wang, 2004, "A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs", Solid-state electronics, 48, (10-11), pp. 2047--2050
  • Rongming Chu, Yu Gang Zhou, Kevin Jing Chen and Kei May Lau, 2003, "Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures", physica status solidi (c), (7), pp. 2400--2403
  • Rongming Chu, YD Zheng, YG Zhou, SL Gu, B Shen and R Zhang, 2003, "Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer", Optical Materials, 23, (1-2), pp. 207--210
  • Rongming Chu, YD Zheng, YG Zhou, SL Gu, B Shen, R Zhang, RL Jiang, P Han and Y Shi, 2003, "Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors", Applied Physics A, 77, (5), pp. 669--671
  • DJ Xi, YD Zheng, P Chen, Rongming Chu, SL Gu, B Shen and R Zhang, 2003, "Study on the AlN/Si (1 1 1) interface properties", Optical Materials, 23, (1-2), pp. 143--146
  • Rongming Chu, YD Zheng, YG Zhou, P Han, B Shen and SL Gu, 2002, "Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors", Applied Physics A, 75, (3), pp. 387--389
  • Rongming Chu, YG Zhou, YD Zheng, P Han, B Shen and SL Gu, 2001, "Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors", Applied Physics Letters, 79, (14), pp. 2270--2272

Conference Proceeding

  • Michael R Hontz, Rongming Chu and Raghav Khanna, 2018, "TCAD modeling of a lateral GaN HEMT using empirical data", pp. 244--248
  • Amy Romero, Christina DiMarino, Rolando Burgos, Ray Li, Mary Chen, Yu Cao and Rongming Chu, 2017, "Static and dynamic characterization of a GaN-on-GaN 600 V, 2 a vertical transistor", pp. 413--418
  • Brian Hughes, Rongming Chu, James Lazar and Karim Boutros, 2015, "Increasing the switching frequency of GaN HFET converters", pp. 16--7
  • Zijian Li, Rongming Chu, Daniel Zehnder, Sameh Khalil, Mary Chen, Xu Chen and Karim Boutros, 2014, "Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate", pp. 257--258
  • Raghav Khanna, Brian Hughes, William Stanchina, Rongming Chu, Karim Boutros and Gregory Reed, 2014, "Modeling and characterization of a 300 V GaN based boost converter with 96\% efficiency at 1 MHz", pp. 92--99
  • Brian Hughes, James Lazar, Stephen Hulsey, Marcel Musni, Daniel Zehnder, Austin Garrido, Raghav Khanna, Rongming Chu, Sameh Khalil and Karim Boutros, 2014, "Normally-off GaN-on-Si multi-chip module boost converter with 96\% efficiency and low gate and drain overshoot", pp. 484--487
  • SG Khalil, L Ray, M Chen, Rongming Chu, D Zehnder, A Garrido, M Munsi, S Kim, B Hughes, K Boutros and others, 2014, "Trap-related parametric shifts under DC bias and switched operation life stress in power AlGaN/GaN HEMTs", pp. CD--4
  • Brian Hughes, James Lazar, Stephen Hulsey, Austin Garrido, Daniel Zehnder, Marcel Musni, Rongming Chu and Karim Boutros, 2013, "Analyzing losses using junction temperature of 300V 2.4 kW 96\% efficient, 1MHz GaN synchronous boost converter", pp. 131--134
  • Brian Hughes, Rongming Chu, James Lazar, Stephen Hulsey, Austin Garrido, Daniel Zehnder, Marcel Musni and Karim Boutros, 2013, "Normally-off GaN switching 400V in 1.4 ns using an ultra-low resistance and inductance gate drive", pp. 76--79
  • Rongming Chu, Brian Hughes, Mary Chen, David Brown, Ray Li, Sameh Khalil, Daniel Zehnder, Steve Chen, Adam Williams, Austin Garrido and others, 2013, "Normally-off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt", pp. 199--200
  • Karim Boutros, Rongming Chu and Brian Hughes, 2013, "Recent advances in GaN power electronics", pp. 1--4
  • Sameh G Khalil, Rongming Chu, Ray Li, Danny Wong, Scott Newell, Xu Chen, M Chen, D Zehnder, S Kim, A Corrion and others, 2012, "Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT", pp. 310--313
  • Karim S Boutros, Rongming Chu and Brian Hughes, 2012, "GaN power electronics for automotive application", pp. 1--4
  • Rongming Chu, David Brown, Daniel Zehnder, Xu Chen, Adam Williams, Ray Li, Mary Chen, Scott Newell and Karim Boutros, 2012, "Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200° C", pp. 237--240
  • Rongming Chu, Daniel Zehnder, Brian Hughes and Karim Boutros, 2011, "High performance GaN-on-Si power switch: Role of substrate bias in device characteristics", pp. 223--224
  • AL Corrion, M Chen, Rongming Chu, SD Burnham, S Khalil, D Zehnder, B Hughes and K Boutros, 2011, "Normally-off gate-recessed AlGaN/GaN-on-Si hybrid MOS-HFET with Al 2 O 3 gate dielectric", pp. 213--214
  • Masataka Higashiwaki, Yi Pei, Rongming Chu and Umesh K Mishra, 2009, "Small-signal and 30-GHz power performance of AlGaN/GaN HFETs without back barriers", pp. 105--106
  • Masataka Higashiwaki, Zhen Chen, Yi Pei, Rongming Chu, Stacia Keller, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui and Umesh K Mishra, 2008, "A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs", pp. 207--208
  • Man Hoi Wong, Yi Pei, Rongming Chu, Siddharth Rajan, Brian L Swenson, David F Brown, Stacia Keller, Steven P DenBaars, James S Speck and Umesh K Mishra, 2008, "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier", pp. 201--202
  • Y Pei, C Suh, Rongming Chu, F Recht, L Shen, A Corrion, C Poblenz, J Speck and UK Mishra, 2007, "AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE", pp. 129--130
  • Rongming Chu, Likun Shen, Nick Fichtenbaum, Stacia Keller, Andrea Corrion, Christiane Poblenz, James Speck and Umesh Mishra, 2007, "Surface treatment for leakage reduction in AlGaN/GaN HEMTs", pp. 127--128
  • Jie Liu, Yugang Zhou, Rongming Chu, Yong Cai, Kevin J Chen and Kei May Lau, 2004, "Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN composite-channel HEMTs with enhanced linearity", pp. 811--814
  • Chun San Chu, Y Zhu, Rongming Chu, KF Chen and Kei May Lau, 2004, "GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors", 3, pp. 2257--2260
  • Rongming Chu, Yugang Zhou, Jie Liu, Kevin Jing Chen and Kei May Lau, 2004, "Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT"
  • Rongming Chu, Yugang Zhou, Kevin Jing Chen and Kei May Lau, 2003, "Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors", pp. 85

Other

  • Brian Hughes and Rongming Chu, 2018, "GaN-on-sapphire monolithically integrated power converter"
  • Rongming Chu and Yu Cao, 2018, "Lateral gan pn junction diode enabled by sidewall regrowth"
  • Yu Cao, Rongming Chu and Zijian Ray Li, 2018, "Doped Gate Dielectric Materials"
  • Andrea Corrion, Keisuke Shinohara, Miroslav Micovic, Rongming Chu, David F Brown, Alexandros D Margomenos and Shawn D Burnham, 2018, "Stepped field plate wide bandgap field-effect transistor and method"
  • Rongming Chu, Yu Cao, LI Zijian and Adam J Williams, 2018, "Tunnel barrier schottky"
  • Rongming Chu, 2018, "III-nitride transistor with trench gate"
  • Rongming Chu and Robert Coffie, 2017, "Semiconductor devices with field plates"
  • Rongming Chu, Zijan Ray Li and Karim Boutros, 2017, "III-nitride transistor with engineered substrate"
  • Rongming Chu and Xu Chen, 2017, "Method for manufacturing a semiconductor structure having a passivated III-nitride layer"
  • Mary Y Chen and Rongming Chu, 2017, "Ta based ohmic contact"
  • Brian Hughes and Rongming Chu, 2017, "GaN-ON-SAPPHIRE MONOLITHICALLY INTEGRATED POWER CONVERTER"
  • Rongming Chu, Umesh Mishra and Rakesh K Lal, 2017, "Methods of forming reverse side engineered iii-nitride devices"
  • Rongming Chu and Yu Cao, 2017, "Gallium nitride complementary transistors"
  • Rongming Chu, Umesh Mishra and Rakesh K Lal, 2016, "Methods of forming reverse side engineered III-nitride devices"
  • Andrea Corrion, Keisuke Shinohara, Miroslav Micovic, Rongming Chu, David F Brown, Adam J Williams, Dean C Regan and Joel C Wong, 2016, "Etch-based fabrication process for stepped field-plate wide-bandgap"
  • Rongming Chu and Robert Coffie, 2016, "Semiconductor devices with field plates"
  • Rongming Chu, Mary Y Chen, Xu Chen, Karim S Boutros and others, 2016, "III-Nitride insulating-gate transistors with passivation"
  • Andrea Corrion, Keisuke Shinohara, Miroslav Micovic, Rongming Chu, David F Brown, Adam J Williams, Dean C Regan and Joel C Wong, 2015, "Etch-based fabrication process for stepped field-plate wide-bandgap"
  • Rongming Chu and others, 2015, "Fet transistor on a iii-v material structure with substrate transfer"
  • Andrea Corrion, Keisuke Shinohara, Miroslav Micovic, Rongming Chu, David F Brown, Alexandros D Margomenos and Shawn D Burnham, 2015, "Stepped field plate wide bandgap field-effect transistor and method"
  • Rongming Chu and Robert Coffie, 2015, "Semiconductor devices with field plates"
  • Rongming Chu, 2015, "Current aperture diode and method of fabricating same"
  • Brian Hughes, Karim S Boutros, Daniel M Zehnder, Sameh G Khalil and Rongming Chu, 2015, "Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loops"
  • Rongming Chu, David F Brown, Xu Chen, Adam J Williams and Karim S Boutros, 2015, "III-Nitride metal-insulator-semiconductor field-effect transistor"
  • Rongming Chu, David F Brown and Adam J Williams, 2015, "Normally-off III-nitride transistors with high threshold-voltage and low on-resistance"
  • Rongming Chu, David F Brown, Xu Chen, Adam J Williams and Karim S Boutros, 2014, "III-nitride metal insulator semiconductor field effect transistor"
  • Rongming Chu and Robert Coffie, 2014, "Semiconductor devices with field plates"
  • Andrea Corrion, Karim S Boutros, Mary Y Chen, Samuel J Kim, Rongming Chu and Shawn D Burnham, 2014, "AlGaN/GaN hybrid MOS-HFET"
  • Rongming Chu, Karim S Boutros, Shawn Burnham and others, 2013, "High current high voltage GaN field effect transistors and method of fabricating same"
  • Rongming Chu, Umesh Mishra and Rakesh K Lal, 2013, "Reverse side engineered III-nitride devices"
  • Rongming Chu and Robert Coffie, 2013, "Semiconductor devices with field plates"
  • Yifeng Wu, Umesh Mishra, Primit Parikh, Rongming Chu, Ilan Ben-Yaacov and Likun Shen, 2011, "Semiconductor heterostructure diodes"
  • Yifeng Wu and Rongming Chu, 2011, "III-nitride devices and circuits"
  • Rongming Chu, 2008, "Gate-recessed gallium nitride high electron mobility transistors with scaled gate length"
  • Rongming Chu, 2004, "AlGaN-GaN single-and double-channel high electron mobility transistors"
  • Rongming Chu, 2002, "Electronic properties of Gallium Nitride-based heterostructures"

Research Projects

Honors and Awards

  • George E. Smith Award, IEEE Electron Device Society, December 2017

Service

Service to Penn State:

Service to External Organizations:

 


 

About

The School of Electrical Engineering and Computer Science was created in the spring of 2015 to allow greater access to courses offered by both departments for undergraduate and graduate students in exciting collaborative research in fields.

We offer B.S. degrees in electrical engineering, computer science, computer engineering and data science and graduate degrees (master's degrees and Ph.D.'s) in electrical engineering and computer science and engineering. EECS focuses on the convergence of technologies and disciplines to meet today’s industrial demands.

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