114 Steidle
1:00-2:30 PM
In response to the crowded electromagnetic spectrum environment, next generation RF/mmW systems continue to push performance to overcome many of the challenges posed by this environment. Higher power densities, higher power efficiencies, greater linearity, all at higher frequencies and with wider operational frequency bandwidths are all potential pieces of the solution for these next generation RF/mmW systems. These performance requirements are in turn creating a demand for advanced materials, such as wide bandgap (e.g. GaN, SiC, etc) and ultra-wide bandgap materials (e.g. diamond, Ga2O3, AlN, c-BN, etc.) as well as new device topologies that in conjunction with using these materials have the potential to solve the technology gaps between the future requirements and the current state of the art/state of practice materials and devices. This seminar will discuss this and then focus on a device topology that provides a potential solution to some of these issues, the Superlattice Castellated Field Effect Transistor (SLCFET), which uses an AlGaN/GaN superlattice structure between source and drain to form multiple parallel current channels, combined with a three-dimensional gate structure wrapping around nanoribbons etched into the epitaxially grown superlattice structure. The SLCFET technology has been demonstrated to be a superlative RF/mmW switch technology, as the first transistor structure to ‘break’ the linkage between a transistor’s ON state resistance and OFF state capacitance. This talk will detail the SLCFET’s functionality and performance as both an RF/mmW switch and amplifier technology, and how it provides a potential solution for the demands of next generation wide band RF/mmW systems.
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